Our research focuses on precision single ion implantation for the realisation of scalable solid state-based quantum technologies. We use and develop state-of-the-art ion implantation tools for the creation of defects and colour centres in different material systems, e.g. NV-centres in diamond.
For scalable quantum technologies, like qubit arrays for quantum computation applications, deterministic single ion implantation techniques are currently under development. “Deterministic” means that not only the spatial precision of single implantation events needs to be optimised, but also at the same time, every single ion arriving at the sample must be detected. Since not only the implantation process itself, but also the sample properties are important to fulfil the various requirements for envisioned applications, we collaborate with the other working groups within the AQS department (Quantum Computer, Optical Magnetometry, AG Lühmann/Pezzagna, Applied Quantum Interactions).
Leibniz Joint Lab "Single Ion Implantation"
In a close collaboration with the Leibniz Institute of Surface Engineering (IOM) in Leipzig a newly developed single ion implanter is used for fundamental ion implantation studies  and to investigate the potential of deterministic ion implantation approaches. This implanter is based on a focused ion beam (FIB) machine, equipped with an electron beam ion source (EBIS), able to produce a nano-focused beam of a variety of ion species and a wide energy range, which is remarkable for such a compact system . The concept of image charge detection is one of the approaches under development to realise deterministic single ion implantation [3, 4, 5].
 P. Räcke, L. Pietzonka, J. Meijer, D. Spemann, R. Wunderlich. Vacancy diffusion and nitrogen-vacancy center formation near the diamond surface. Appl. Phys. Lett. 118, 204003 (2021). DOI: 10.1063/5.0046031.
 P. Räcke, R. Wunderlich, J.W. Gerlach, J. Meijer, D. Spemann. Nanoscale ion implantation using focussed highly charged ions. New J. Phys. 22, 083028 (2020). DOI: 10.1088/1367-2630/aba0e6.
 P. Räcke, J. Meijer, D. Spemann. Image charge detection of ion bunches using a segmented, cryogenic detector. J. Appl. Phys. 131, 204502 (2022). DOI: 10.1063/5.0096094.
 P. Räcke, R. Staacke, J.W. Gerlach, J. Meijer, D. Spemann. Image charge detection statistics relevant for deterministic ion implantation. J. Phys. D: Appl. Phys. 52, 305103 (2019) . DOI: 10.1088/1361-6463/ab1d04.
 P. Räcke, D. Spemann, J.W. Gerlach, B. Rauschenbach, J. Meijer. Detection of small bunches of ions using image charges. Sci. Rep. 8, 9781 (2018). DOI: 10.1038/s41598-018-28167-6.
BSc/MSc Theses Topics
Systematic investigation of sulphur doping for enhanced NV-centre yield using a single ion implanter (Master thesis)
Contact: Dr. Paul Räcke